发明名称 EFUSE CIRCUIT USING LEAKAGE CURRENT PATH OF TRANSISTOR
摘要 <p>An e-fuse circuit using a leakage current path of a transistor is provided to perform a fusing program, using a leakage current formed by breaking down the transistor by applying a high voltage, thereby assuring repeatability and reliability. A program circuit(101) includes a program transistor programmed by forming a leakage current path by a program voltage. A switch circuit(102) is connected between the program circuit and a ground node, and connects the leakage current path and the ground node in response to the program voltage. A current supply circuit(103) is connected to the program circuit, and supplies a current to the leakage current path after the program transistor is programmed. A sense amplifier circuit(104) is connected to a program node connected to the current supply circuit and the leakage current path and then senses and outputs the program result.</p>
申请公布号 KR20060112357(A) 申请公布日期 2006.11.01
申请号 KR20050034667 申请日期 2005.04.26
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 CHOI, JEONG UN;HWANG, SO HEE
分类号 G11C29/00 主分类号 G11C29/00
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