发明名称 |
EFUSE CIRCUIT USING LEAKAGE CURRENT PATH OF TRANSISTOR |
摘要 |
<p>An e-fuse circuit using a leakage current path of a transistor is provided to perform a fusing program, using a leakage current formed by breaking down the transistor by applying a high voltage, thereby assuring repeatability and reliability. A program circuit(101) includes a program transistor programmed by forming a leakage current path by a program voltage. A switch circuit(102) is connected between the program circuit and a ground node, and connects the leakage current path and the ground node in response to the program voltage. A current supply circuit(103) is connected to the program circuit, and supplies a current to the leakage current path after the program transistor is programmed. A sense amplifier circuit(104) is connected to a program node connected to the current supply circuit and the leakage current path and then senses and outputs the program result.</p> |
申请公布号 |
KR20060112357(A) |
申请公布日期 |
2006.11.01 |
申请号 |
KR20050034667 |
申请日期 |
2005.04.26 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHOI, JEONG UN;HWANG, SO HEE |
分类号 |
G11C29/00 |
主分类号 |
G11C29/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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