| 摘要 |
PROBLEM TO BE SOLVED: To provide a gas barrier film having an excellent gas barrier property as compared with a conventional gas barrier film since even when a gas barrier layer is formed by a plasma CVD method, a substrate is not etched, an irregularity is not generated in the gas barrier property and adhesion of the substrate to a laminate is not decreased. SOLUTION: In the gas barrier film comprising the substrate and the laminate which is positioned on one side surface or both surfaces of the substrate and has the gas barrier layer formed at least by a plasma CVD method or a sputtering method, the substrate comprises polymer resin wherein an oxygen gas or a mixed gas of the oxygen gas and an inert gas is introduced under a pressure of 1 to 90 Pa and an etching rate in etching the substrate by the gas is 0.001 to 0.15μ/min. |
