METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

摘要

A method for manufacturing a semiconductor device is provided to simplify manufacturing processes and to prevent the generation of particles due to a wafer transferring process by performing etching processes on a polysilicon hard mask and an interlayer dielectric using one chamber alone. An interlayer dielectric(22) made of an oxide layer is formed on a semiconductor substrate(21). A polysilicon hard mask(23) is formed on the resultant structure. The polysilicon hard mask is selectively etched by using a contact mask as an etch mask. The interlayer dielectric is then etched by using the etched polysilicon hard mask as an etch mask. At this time, the polysilicon hard mask and the interlayer dielectric are etched in the same chamber.