THE SEMICONDUCTOR GAS SENSOR AND THE METHOD THERE OF

摘要

A semiconductor gas sensor and its manufacturing method are provided to improve a detecting capability by reducing a response time on single or multi-gases using a bridge type detective layer and an improved arrangement of a heater electrode. A semiconductor gas sensor comprises a silicon substrate, a growth plate, a detective layer, and detective and heater electrodes. The silicon substrate(101) includes upper and lower insulating layers(102) and a micro channel(103) at a center portion. The growth plate(104) is formed at the micro channel. A detective layer(107) is vertically grown on the growth plate. At this time, the detective layer is formed like a bridge type structure. The detective and heater electrodes(106) are formed on an upper surface of the upper insulating layer and a lower surface of the lower insulating layer, respectively.