Method for forming a multi-layer low-K dual damascene

摘要

A damascene structure and method for forming the same in a multi-density dielectric insulating layer the method including providing a substrate; forming at least a first layer comprising silicon oxide according to a first process having a first density; forming at least a second layer comprising silicon oxide according to a second process over the first layer having a second density less than the first density; etching a damascene opening through a thickness portion of the at least a first and the at least a second layer; and, filling the damascene opening to form a metal filled damascene.