发明名称 Oxidation method and oxidation system
摘要 An oxidation method is capable of forming oxide films in an improved interfilm thickness uniformity. The oxidation method includes the steps of supplying an oxidizing gas and a reducing gas into a processing vessel 22 capable of being evacuated and holding a plurality of workpieces W arranged at predetermined pitches, and creating a process atmosphere containing active oxygen species and active hydroxyl species in the processing vessel 22 through the interaction of the oxidizing gas and the reducing gas. At least either of the oxidizing gas and the reducing gas is jetted into an upstream region S 1 , a middle region S 2 and a downstream region S 3 , with respect to the flowing direction of the gas, of a processing space S containing the workpieces W.
申请公布号 US7129186(B2) 申请公布日期 2006.10.31
申请号 US20040992469 申请日期 2004.11.19
申请人 TOKYO ELECTRON LIMITED 发明人 HASEBE KAZUHIDE;UMEZAWA KOTA;TAKAHASHI YUTAKA
分类号 H01L21/31;H01L21/00;H01L21/316;H01L21/469 主分类号 H01L21/31
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