发明名称 Multicrystalline silicon substrate and process for roughening surface thereof
摘要 A surface of a multicrystalline silicon substrate is etched with an alkaline aqueous solution in a condition so that a surface area-to-planar surface area ratio R is smaller than 1.1. A multiplicity of fine textures are formed over the irregularities by dry etching. This allows fine textures to be formed uniformly, and a solar cell with high efficiency can thus be produced.
申请公布号 US7128975(B2) 申请公布日期 2006.10.31
申请号 US20040762676 申请日期 2004.01.22
申请人 KYOCERA CORPORATION 发明人 INOMATA YOSUKE
分类号 B32B9/04;C01B33/02;B44C1/22;H01L21/306;H01L21/3065;H01L31/00;H01L31/0236;H01L31/04;H01L31/068 主分类号 B32B9/04
代理机构 代理人
主权项
地址