| 发明名称 |
Semiconductor device and method of manufacturing the same |
| 摘要 |
Hexachlorodisilane (Si<SUB>2</SUB>Cl<SUB>6</SUB>) is used as a Si raw material for forming a silicon nitride film that can be widely different in the etching rate from a silicon oxide film. The silicon nitride film is formed by an LPCVD method.
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| 申请公布号 |
US7129132(B2) |
申请公布日期 |
2006.10.31 |
| 申请号 |
US20040895087 |
申请日期 |
2004.07.21 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
TANAKA MASAYUKI;SAIDA SHIGEHIKO;TSUNASHIMA YOSHITAKA |
| 分类号 |
H01L21/318;H01L21/336;H01L21/60;H01L21/768;H01L21/8242;H01L23/485;H01L23/522;H01L27/108;H01L29/78 |
主分类号 |
H01L21/318 |
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