发明名称 |
Depositing a tantalum film |
摘要 |
This invention relates to a method of depositing a tantalum film in which alpha-Ta dominates and to methods of electroplating copper using such films. The films have a thickness of less than 300 nm and are formed by depositing a seed layer of an organic containing low dielectric constant insulating layer and sputtering tantalum onto the seed layer at a temperature below 250° C.
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申请公布号 |
US7129161(B2) |
申请公布日期 |
2006.10.31 |
申请号 |
US20040483805 |
申请日期 |
2004.09.15 |
申请人 |
TRIKON HOLDINGS LIMITED |
发明人 |
DONOHUE HILKE |
分类号 |
C25D7/12;H01L21/4763;C23C14/02;C23C14/14;C23C28/00;H01L21/28;H01L21/285;H01L21/3205;H01L21/768;H01L23/52 |
主分类号 |
C25D7/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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