| 发明名称 |
Method of designing semiconductor device, semiconductor device and recording medium |
| 摘要 |
A semiconductor device including a transistor having an SOI structure the operating speed of which is not affected is provided. A MOS transistor having the SOI structure is formed which satisfies R.C.f<1 where C is a gate capacitance (F), R is a body resistance (Omega), f is a clock operating frequency (Hz), and f>=500 MHz.
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| 申请公布号 |
US7129543(B1) |
申请公布日期 |
2006.10.31 |
| 申请号 |
US19980176315 |
申请日期 |
1998.10.22 |
| 申请人 |
RENESAS TECHNOLOGY CORP. |
发明人 |
MAEDA SHIGENOBU;YAMAGUCHI YASUO |
| 分类号 |
H01L21/762;H01L27/01;G06F17/50;H01L21/336;H01L21/765;H01L27/02;H01L27/12;H01L29/423;H01L29/786 |
主分类号 |
H01L21/762 |
| 代理机构 |
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代理人 |
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