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发明名称
Method for forming planarized intermetal dielectric film of semiconductor device
摘要
申请公布号
KR100640625(B1)
申请公布日期
2006.10.31
申请号
KR20050000377
申请日期
2005.01.04
申请人
发明人
分类号
H01L21/304
主分类号
H01L21/304
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