发明名称 |
Micropattern shape measuring system and method |
摘要 |
A test pattern formed in a scribe line area of a wafer is irradiated with a light beam to measure the width thereof; the test pattern is irradiated with an electron beam so as to measure the width thereof; an amount of change in the width of the test pattern is calculated; a dummy pattern having the same width as that of a semiconductor device of the wafer is irradiated with an electron beam to measure the width thereof; and the width of a pattern is estimated by the use of the calculated amount of width change so as to determine the shape of the pattern. Thus, a shape measuring system and method capable of determining the shape of a micropattern in a semiconductor device without changing the dimensions of the micropattern can be provided.
|
申请公布号 |
US7130063(B2) |
申请公布日期 |
2006.10.31 |
申请号 |
US20050102703 |
申请日期 |
2005.04.11 |
申请人 |
HITACHI HIGH-TECHNOLOGIES CORPORATION |
发明人 |
MITSUI YASUHIRO;USAMI YASUTSUGU;KAWATA ISAO;TOYOSHIMA YUYA;OTAKA TADASHI;IRIKI NOBUYUKI |
分类号 |
G01B11/04;G01Q30/04;H01L23/544 |
主分类号 |
G01B11/04 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|