METHOD OF PRODUCING NITRIDE LAYER AND METHOD OF FABRICATING VERTICAL STRUCTURE NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE

摘要

A method for fabricating a nitride layer is provided to discharge the heat generated in disintegrating a nitride layer through a buffer layer by properly adjusting the intensity of irradiated laser so that disintegration occurs on the interface between the nitride layer and the buffer layer. A buffer layer(110) is formed on a sapphire substrate(100), having a higher melting point than that of a nitride and higher heat conductivity than that of the nitride. The buffer layer has a thickness of 2000 angstroms, made of SiC. A nitride layer(120) is formed on the buffer layer. Laser(L) is irradiated to the lower part of the sapphire substrate to disintegrate the nitride layer.