| 发明名称 |
Method for etching a thin metal layer |
| 摘要 |
A method for etching a metal layer is described. That method comprises forming a metal layer on a substrate, then exposing part of the metal layer to a wet etch chemistry that comprises an active ingredient with a diameter that exceeds the thickness of the metal layer.
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| 申请公布号 |
US7129182(B2) |
申请公布日期 |
2006.10.31 |
| 申请号 |
US20030704498 |
申请日期 |
2003.11.06 |
| 申请人 |
INTEL CORPORATION |
发明人 |
BRASK JUSTIN K.;DOCZY MARK L.;KAVALIEROS JACK;SHAH UDAY;METZ MATTHEW V.;CHAU ROBERT S.;TURKOT, JR. ROBERT B. |
| 分类号 |
H01L21/302;C23F1/02;H01L21/3213;H01L21/8238 |
主分类号 |
H01L21/302 |
| 代理机构 |
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