| 摘要 |
A method for fabricating a semiconductor device is provided to avoid a film peeling phenomenon occurring in a die sawing process by forming a metal contact in a dummy die region and by forming a scribe lane so that the dummy die region is partially sawed. A first interlayer dielectric(130) is formed on a wafer including a lower structure(120) having a net die region(2000a) and a dummy die region(2000b). A first contact plug(135) penetrates the first interlayer dielectric to be connected to the lower structure in the net die region and the dummy die region. A first metal interconnection(140) and a first metal layer(145) are respectively connected to the first contact plug in the net die region and the dummy die region. A second interlayer dielectric(150) is formed on the resultant structure. A second contact plug(155) is connected to the first metal interconnection and the first metal layer through the second interlayer dielectric. A second metal interconnection(160) and a second metal layer(165) are formed in the net die region and the dummy die region, connected to the second contact plug. A scribe lane(180) is defined in the interface between the net die region and the dummy die region and in a predetermined region of the dummy die by a photolithography process using a pad open mask.
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