发明名称 Electron beam lithography method
摘要 An electron beam lithography method includes extending the widths of a plurality of stripes which divide a region where an electron beam exposure is to be performed, so that the boundaries of the stripes overlap adjacent stripes at each boundary, and sequentially exposing each of the stripes to an electron beam.
申请公布号 US7129024(B2) 申请公布日期 2006.10.31
申请号 US20030623612 申请日期 2003.07.22
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KI WON-TAI
分类号 G03C5/00;G03F7/22;G03F7/20;H01J37/317 主分类号 G03C5/00
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