| 摘要 |
817,952. Semi-conductor devices. SIEMENS EDISON SWAN Ltd. April 25, 1956 [April 28, 1955], No. 12308/55. Class 37. A semi-conductor device of the P-N junction type is protected against the effects of the atmosphere by being wholly or partly covered with a layer of sulphur. As described, the device may be a rectifier or a transistor comprising a wafer of N-type germanium to which one or two pellets of indium has or have been fused. Molten sulphur may be applied or the device exposed to a gas containing sulphur, e.g. hydrogen sulphide or sulphur dioxide. The device may then be enclosed in an evacuated envelope or in one filled with inert gas or insulating liquid. |
