发明名称 Plate for forming metal wires and method of forming metal wires using the same
摘要 A plate for forming the metal wires has an engraved pattern for forming a plurality of trenches and an engraved pattern for forming a plurality of via holes. An insulating film pattern in which the trenches and the via holes are shaped is obtained using the plate. Also, a metal is buried into the trenches and the via holes by means of a damascene process to form upper metal wires electrically connected to lower metal wires. In the invention, photolithography and etch processes are not employed. For this reason, reduction in the yield and reliability due to defects occurring in the photolithography and etch processes is prevented. Furthermore, the process steps are reduced to reduce the production cost and to improve productivity.
申请公布号 US7128946(B2) 申请公布日期 2006.10.31
申请号 US20030617473 申请日期 2003.07.11
申请人 HYNIX SEMICONDUCTOR INC. 发明人 PARK SANG KYUN
分类号 B05D1/32;B05D3/00;B05D5/00;B32B3/26;H01L21/3205;H01L21/48;H01L21/60;H01L21/768;H05K3/46 主分类号 B05D1/32
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