| 摘要 |
A method of forming ZnO thin films with good quality by using an MOCVD(metal-organic chemical vapor deposition) apparatus is provided. A method of forming ZnO thin films by an MOCVD(metal-organic chemical vapor deposition) apparatus comprises: a step(110) of forming a nanoseed layer comprising zinc oxide as a principal component on the substrate by injecting a raw material gas containing a zinc source and an oxygen source into the reaction chamber for 5 to 30 seconds while maintaining a temperature of a substrate installed within a reaction chamber of the MOCVD apparatus to 500 to 900 deg.C; and a step(120) of forming a main layer comprising zinc oxide as a principal component on the nanoseed layer by injecting the raw material gas containing a zinc source and an oxygen source into the reaction chamber while maintaining a temperature of the substrate to less than 500 deg.C.
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