| 摘要 |
<p>A TFT display plate is provided to form a TFT display plate including polycrystalline silicon with excellent mobility while using a polycrystalline semiconductor by simply performing a crystallization process without constructing an additional line for fabricating a polycrystalline silicon TFT and by using amorphous silicon as a semiconductor layer. First and second electrodes are formed on a substrate(110), separated from each other. At least a part of a semiconductor(154,154a,154b) is formed on the first and the second electrodes such that the semiconductor includes upper amorphousness and lower polycrystal. An insulation layer is formed on the semiconductor. A third electrode is formed on the insulation layer. A resistive contact member is included among the semiconductor, the first electrode and the second electrode, having amorphous silicon doped with impurities.</p> |
