发明名称 Silicon oxynitride passivated rare earth activated thioaluminate phosphors for electroluminescent displays
摘要 A novel structure is provided to improve the operating stability of thioaluminate based phosphors used in ac thick film dielectric electroluminescent displays. The novel structure comprises a rare earth activated alkaline earth thioaluminate phosphor thin film layer and a silicon oxynitride layer provided directly adjacent the top and/or bottom of the phosphor thin film layer, wherein said silicon oxynitride layer comprises a composition of Si<SUB>3</SUB>N<SUB>x</SUB>O<SUB>y</SUB>H<SUB>z </SUB>where 2<=x<=4, 0<y<=2 and 0<=z<=1. The invention is particularly applicable to phosphors used in electroluminescent displays that employ thick dielectric layers subject to high processing temperatures to form and activate the phosphor films.
申请公布号 US7129633(B2) 申请公布日期 2006.10.31
申请号 US20030661910 申请日期 2003.09.12
申请人 IFIRE TECHNOLOGY INC. 发明人 KOSYACHKOV ALEXANDER
分类号 H05B33/14;C09K11/00;C09K11/62;C09K11/64;C09K11/77;C09K11/88;C23C14/06;H05B33/00;H05B33/10;H05B33/22 主分类号 H05B33/14
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