METHOD FOR FABRICATING THIN SILICON OXIDE LAYER FOR SEMICONDUCTOR DEVICE USING OXIDATIVE BEHAVIOR OF PHOTOCATALYST

摘要

A method of forming an oxide layer of a semiconductor device using photo-catalyst activity is provided to acquire an oxide layer stably by using the diffusion of active oxygen species generated from the irradiation of ultraviolet rays onto a photo-catalyst layer. A photo-catalyst layer(120) is deposited on a first substrate(110). The first substrate is a light transmitting substrate. A heat treatment is performed on the resultant structure. The resultant structure is loaded on a second substrate(130). An oxide layer is formed on the second substrate by irradiating ultraviolet rays onto the photo-catalyst layer under a predetermined temperature condition of 500‹C or less. The photo-catalyst layer is made of TiO2.