发明名称 FORMING METHOD OF MICROLENS CAPPING LAYER IN IMAGE SENSOR
摘要 A method for forming a micro lens capping layer of an image sensor is provided to separate the micro lens and an OCL(over-coating layer) from the moisture in the air and easily remove the foreign substance dropped to a micro lens region by forming a silicon nitride layer in a micro lens capping layer for protecting the micro lens. By a capping layer for protecting a micro lens(212), a predetermined thickness of a silicon nitride layer is formed along the topology of the resultant structure including the micro lens. The silicon nitride layer is formed in a condition of a temperature of 100-250 deg.C, pressure of 0.1-50 Torr, and power of 10 watt-100 kilowatt.
申请公布号 KR20060111792(A) 申请公布日期 2006.10.30
申请号 KR20050034157 申请日期 2005.04.25
申请人 MAGNACHIP SEMICONDUCTOR, LTD. 发明人 JUNG, SEUNG MAN
分类号 H01L27/146 主分类号 H01L27/146
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