METHODS OF SELECTIVELY FORMING AN EPITAXIAL SEMICONDUCTOR LAYER USING A ULTRA HIGH VACUUM CHEMICAL VAPOR DEPOSITION TECHNIQUE AND BATCH-TYPE ULTRA HIGH VACUUM CHEMICAL VAPOR DEPOSITION APPARATUS USED THEREIN

摘要

Methods for selectively forming an epitaxial semiconductor layer using ultra high vacuum chemical vapor deposition technique and a batch-type ultra high vacuum chemical vapor deposition apparatus used therein are provided to improve uniformity of epitaxial semiconductor layers formed on every wafer by performing selective epitaxial process using a high vacuum chemical vapor deposition equipment having plural nozzles. Dielectric patterns exposing predetermined regions of semiconductor substrates(61) are formed on plural semiconductor substrates. The substrates having dielectric patterns are loaded in a reaction furnace. Air in the reaction furnace is exhausted and the substrates therein are heated in 550‹C to 700‹C. Semiconductor source gas(25) is implanted into the reaction furnace to form selectively epitaxial semiconductor layer(65c) on the predetermined regions of the heated substrates. The remained semiconductor source gas in the reaction furnace is purged. Selective etch gas is implanted into the reaction furnace to selectively remove semiconductor atoms(65a,65b) absorbed on the surfaces of the dielectric patterns. The selective etch gas remained in the reaction furnace is purged.