METHOD FOR DEPOSITION OF MICROLENS CAPPING LAYER IN IMAGE SENSOR

摘要

A method for depositing a micro lens capping layer of an image sensor is provided to increase activation of a substrate and the density of a deposition layer by depositing a micro lens capping layer by a PECVD method in which bias power is applied to the substrate. A silicon oxide layer is formed as a capping layer for protecting a micro lens on a substrate(302) having the micro lens. Bias power(303) is applied to the substrate to deposit the silicon oxide layer by a PE-CVD method. In depositing the silicon oxide layer, source gas in which SiH4 of 100-500 sccm and N2O of 1000-9000 sccm are mixed is used and RF power of 0.2-0.8 kilowatt is applied. The bias power applied to the substrate is 0.1-0.7 kilowatt, and a process temperature is 100-250 deg.C.