Semiconductor device including a gate dielectric layer formed of a high dielectric alloy and method of fabricating the same,申请号KR20030094813-传众专利搜索

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发明名称	Semiconductor device including a gate dielectric layer formed of a high dielectric alloy and method of fabricating the same
摘要
申请公布号	KR100639673(B1)	申请公布日期	2006.10.30
申请号	KR20030094813	申请日期	2003.12.22
申请人		发明人
分类号	H01L21/336;H01L21/28;H01L29/51	主分类号	H01L21/336
代理机构		代理人
主权项
地址

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