发明名称 THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF
摘要 <p>A TFT display panel is provided to eliminate the necessity of an additional photolithography process for forming a pixel electrode by simultaneously forming a pixel electrode and a contact hole for connecting a drain electrode to the pixel electrode. A gate line is formed on a substrate. A first insulation layer is formed on the gate line. A semiconductor layer is formed on the first insulation layer. A data line(171), a drain electrode(175) and a storage capacitor conductor(177) are formed on the semiconductor layer. A second insulation layer is deposited on the data line, the drain electrode and the storage capacitor conductor. A first photoresist layer pattern is formed on the second insulation layer. By using the photoresist layer pattern as a mask, the second insulation layer is eliminated to expose the data line, a part of the storage capacitor conductor, and a part of the first insulation layer. The exposed data line and the exposed storage capacitor conductor are removed to expose a part of the semiconductor layer. The exposed semiconductor layer and the exposed first insulation layer are removed to expose a part of the substrate. A transparent conductive layer is deposited. The first photoresist layer pattern is removed to form a pixel electrode(190) connected to the data line, the drain electrode and the storage capacitor conductor. The photoresist layer pattern is formed by using a photomask including a light blocking region and a light transmission region.</p>
申请公布号 KR20060111753(A) 申请公布日期 2006.10.30
申请号 KR20050034072 申请日期 2005.04.25
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 HAN, KYOUNG TAI;KIM, JANG SOO
分类号 H01L29/786;G02F1/136 主分类号 H01L29/786
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