| 摘要 |
A method of manufacturing a light emitting device of upward emission type and a thin film forming apparatus used in the method are provided. A plurality of film forming chambers are connected to a first transferring chamber (103). The plural film forming chambers include a metal material evaporation chamber (107), an EL layer forming chamber (114), a sputtering chamber (108), a CVD chamber (109), and a sealing chamber (110). By using this thin film forming apparatus, an upward emission type EL element can be fabricated without exposing the element to the outside air. As a result, a highly reliable light emitting device is obtained.
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