SEMICONDUCTOR DEVICE TIN LAYER STRUCTURE, FABRICATION METHOD THE SAME, SEMICONDUCTOR DEVICE HAVING THE SAME, AND SEMICONDUCTOR DEVICE FABRICATION METHOD

摘要

A TiN layer structure of a semiconductor device, a method for manufacturing the TiN layer structure, a semiconductor employing TiN layer structure, and a manufacturing method thereof are provided to improve mass production and electrical characteristic by using the semiconductor including the TiN layer structure. An interlayer dielectric(120) is formed between a lower conductive layer(110) and an upper conductive layer(160). A contact hole(130) is formed on the interlayer dielectric to connect the lower conductive layer and the upper conductive layer. A metal barrier layer(140) is formed on an inner wall of the contact hole. The metal barrier layer includes a TiN base layer(141) and a conductive capping layer(143). The conductive capping layer where unit layers are repeatedly layered is formed on the TiN base layer. A contact plug(150) is formed on the metal barrier layer and buries the contact hole.