METHOD FOR FABRICATING CMOS IMAGE SENSOR

摘要

A method for fabricating a CMOS image sensor is provided to improve a low illumination characteristic by preventing a dark signal component from being introduced into a photodiode. A pad layer in which an isolation region is opened is formed on a semiconductor substrate(201). The substrate is etched to form a trench by using the pad layer as an etch barrier. Channel stop ions are implanted into the substrate in the trench by using the pad layer as an ion implantation mask. Fluorine ions are implanted by using the pad layer as an ion implantation mask with a dose of 5 10^13-1 10^16 atoms/square centimeter at energy of 5-50 keV to couple fluorine ions to the surface of the substrate. A rapid thermal process is performed.