| 摘要 |
High dense sintered body based on aluminum nitride useful for device used to fabricate semiconductor is provided to have desired volumetric resistance above 1x10^15 ohms.cm, and exhibit excellent leak current property, sufficient adsorption, favorable desorption and superior heat conductivity, thereby applying the sintered body in forming a device for semiconductor requiring Coulomb's type of electro-static chuck as high volumetric resistance. The high dense sintered body includes aluminum nitride, titanium nitride(TiN) that has a ratio of diffraction peak intensity ranging of 0.1-20% relative to that of aluminum nitride, and magnesium aluminate(MgAl2O4) that has a ratio of diffraction peak intensity ranging of 0.1-10% relative to that of aluminum nitride and shows volume resistance more than 1 x 10^15 ohms.cm at ambient temperature and relative density more than 99%. The aluminum nitride powder contains 0.1-15wt.% of yttrium oxide Y2O3, 0.01-5wt.% of TiO2 and 0.1-10wt.% of MgO before sintering, and has volume resistance more than 1 x 10^15 ohms.cm at room temperature and relative density more than 99% after sintering.
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