MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

A method for manufacturing a semiconductor device is provided to reduce difference of polishing rate between an edge unit and a center unit of a wafer by performing a first and a second CMP(Chemical Mechanical Polishing) whose pressure rate is 50% to 100%. A dielectric(120) having a groove(123) is formed on a predetermined structure(110) of a wafer(100). A barrier metal layer(130) and a copper layer(140) are formed in turn on the dielectric and the groove. The copper layer is planarized to expose the barrier metal layer by a first CMP(Chemical Mechanical Polishing) process. Surfaces of the barrier metal layer and the dielectric are etched by a second CMP process. The first and the second CMP process are performed by using a CMP apparatus. The CMP apparatus includes a head unit and a polishing unit. The wafer is attached to the head unit. The polishing unit is located under the head unit and connected to the wafer to polish it. First pressure is applied to the head unit by the CMP apparatus. Second pressure is applied to a rear of the wafer by the CMP apparatus. The value of the second pressure/the first pressure is greater than 50% and less than 100% in the CMP process.