Optical component e.g. phase shift mask, forming method for microelectronic application, involves inserting adjustment layer between stack, etching stack and layer parts and annealing layer to contract it to less than one nanometer

摘要

The method involves forming an extreme ultraviolet reflecting multilayer stack (32, 34) and inserting an adjustment layer (30) between the multilayer stack, where the adjustment layer is formed of a metal-semiconductor mixture. Parts of the multilayer stack and the adjustment layer are etched. The adjustment layer is then annealed for contracting the layer to less than 1 nanometer. The adjustment layer includes a barrier layer interface in the multilayer stack.