Two-dimensional conducting perovskite for e.g. making dielectric of capacitive component, has crystalline structure conferring increasing capacity along optic axis, and receives dielectric perovskite deposited on silicon dioxide substrate

摘要

The perovskite has an optic axis along which a mesh parameter c is different from mesh parameters a and b of two other axes that are at the same magnitude, where the perovskite constitutes an electrode of a capacitive component and receives a dielectric perovskite. A quadratic crystalline structure confers an increasing capacity along the axis of the mesh parameter c. The dielectric perovskite is deposited on a silicon dioxide substrate by laser ablation when the substrate is at a temperature between 650 and 750 degrees Celsius and is treated in an atmosphere of residual oxygen. An independent claim is also included for a method for making capacitive components in an integrated circuit.