METHOD OF INSPECTING OPTICAL PROXIMITY CORRECTION USING LAYER VERSUS LAYER METHOD

摘要

A method for inspecting an optical proximity correction using a layer-versus-layer examining method is provided to improve detection accuracy of a difference between original and amendment of a semiconductor design by considering illumination condition. An optical proximity correction is performed on an original semiconductor design to manufacture an amended semiconductor design(520). The original semiconductor design and the amended semiconductor design are compared to each other(530). A deviation pattern result from the comparison result is separated according to illumination(540). The separated deviation pattern is compared with a reference value to determine whether an error with respect to the optical proximity correction is occurred(550).