发明名称 |
Replacement gate flow facilitating high yield and incorporation of etch stop layers and/or stressed films |
摘要 |
The present invention relates to the deposition of a layer above a transistor structure, causing crystalline stress within the transistor, and resulting in increased performance. The stress layer may be formed above a plurality of transistors formed on a substrate, or above a plurality of selected transistors.
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申请公布号 |
US2006237804(A1) |
申请公布日期 |
2006.10.26 |
申请号 |
US20060473459 |
申请日期 |
2006.06.22 |
申请人 |
CHAU ROBERT S;BRASK JUSTIN K;BARNS CHRIS E;HARELAND SCOTT A |
发明人 |
CHAU ROBERT S.;BRASK JUSTIN K.;BARNS CHRIS E.;HARELAND SCOTT A. |
分类号 |
H01L29/772;H01L21/336;H01L21/4763 |
主分类号 |
H01L29/772 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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