发明名称 RFID system including a memory for correcting a fail cell and method for correcting a fail cell using the same
摘要 A radio frequency identification (RFID) system and a method for correcting a failed cell using the same are provided. The RFID system effectively corrects randomly distributed cell data by using a failed cell correcting circuit in a memory. In the RFID system, a predetermined number of unit cells are separated into one memory group, and the same data are stored in each memory group at a write mode. At a read mode, the cell data of the selected memory group are compared, and the same data are identified as effective data to improve yield of the RFID system.
申请公布号 US2006238310(A1) 申请公布日期 2006.10.26
申请号 US20050298670 申请日期 2005.12.12
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KANG HEE B.;AHN JIN H.
分类号 H04Q5/22 主分类号 H04Q5/22
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