| 摘要 |
A nonvolatile ferroelectric memory device including a failed cell correcting circuit which effectively processes randomly distributed cell data. The nonvolatile ferroelectric memory device checks horizontal parity of a main memory cell array and stores the parity in a horizontal parity check cell array, and checks vertical parity of a main memory cell array and stores the parity in the vertical parity check cell array. Then, code data stored in the horizontal parity check cell array and the vertical parity check cell array are compared to sensing data of the main memory cell to correct an error datum. As a result, a 1 bit failure randomly generated within a predetermined column is corrected.
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