Photolithographic method for structuring of e.g. dynamic RAM memory cell, involves resulting in ion implantation for doping of two different areas of substrate under two different implantation angles with respect to surface of substrate

摘要

The method involves applying and structuring a covering layer (121) on two different areas (111, 112) of a semiconductor substrate (101) with a photolithographic mask, where a semiconductor component is arranged on the substrate. An ion implantation for doping of the two different areas results under two different implantation angles with respect to a surface (190) of the semiconductor substrate.