发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR ELEMENT, SEMICONDUCTOR ELEMENT, ELECTRONIC DEVICE, AND ELECTRONIC EQUIPMENT |
摘要 |
<p>The object of the present invention is to provide a method of manufacturing a semiconductor element which can produce a semiconductor element provided with a semiconductor layer having a high carrier transport ability, a semiconductor element manufactured by the semiconductor element manufacturing method, an electronic device provided with the semiconductor element, and electronic equipment having a high reliability. In order to achieve the object, the present invention is directed to a method of manufacturing a semiconductor element having an anode 3, a cathode 5, and a hole transport layer 41 provided between the anode 3 and the cathode 5, the method comprising the steps of: a first step for forming layers 41' mainly comprised of a hole transport material having polymerizable groups X on the side of one surface of the anode 3 and on the side of one surface of the cathode 5, respectively, and a second step for obtaining the hole transport layer 41 by integrating the two layers 41' together by polymerizing the hole transport materials via a polymerization reaction through their polymerizable groups in a state that the layer 41' on the side of the anode 3 and the layer 41' on the side of the cathode 5 are made contact with each other.</p> |
申请公布号 |
WO2006112537(A1) |
申请公布日期 |
2006.10.26 |
申请号 |
WO2006JP308674 |
申请日期 |
2006.04.18 |
申请人 |
SEIKO EPSON CORPORATION;SHINOHARA, TAKASHI;SHINOHARA, YUJI;TERAO, KOICHI |
发明人 |
SHINOHARA, TAKASHI;SHINOHARA, YUJI;TERAO, KOICHI |
分类号 |
H01L51/40;H01L51/48;H01L51/56 |
主分类号 |
H01L51/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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