| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a dry etching method attaching and depositing no reaction product in the dry etching method for a laminated structure composed of a first electrode film, a ferroelectric film or a high dielectric-constant film and a second electrode film. <P>SOLUTION: In the dry etching method, the flow ratio of an Ar gas is increased and a sputtering etching effect is intensified when a precious metal as the first and the second electrode film is etched while the frequency of a bias power supply is lowered and an ion implantation is further increased, and a gas pressure is lowered. In the dry etching method, the flow ratio of a CF<SB>4</SB>gas is increased and a reaction etching effect is intensified by promoting a reactivity in the ferroelectric film and the high dielectric-constant film, the gas pressure is lowered, and the adhesion and deposition of the reaction product are prevented by an increase at the flow rate of an etching gas. <P>COPYRIGHT: (C)2007,JPO&INPIT |
