| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device and a semiconductor element which can improve the heat dissipation characteristics and enhance the operational performance and reliability of the LSI. <P>SOLUTION: A semiconductor element 1 incorporates a wiring structure layer 3 formed on a semiconductor substrate 2, many terminal electrodes 5 formed on the wiring structure layer 3 in connection with an interconnect line 7a composing the wiring structure layer 3, and many dummy terminal electrodes 6 which are not electrically connected with the interconnect line 7a. At least one of the dummy terminal electrodes 6 is joined to a high-performance thermal conduction layer 7b buried into the wiring structure layer 3. On the semiconductor device, a first and second semiconductor elements are laminated and interconnected with each other, and at least one of the first and second semiconductor elements is the semiconductor element of this invention. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
