| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor apparatus so improved that short-circuiting between a gate electrode and a source/drain region can be prevented even when the height of the gate electrode is reduced. SOLUTION: A gate electrode 10 with a first insulating layer 5 formed over its upper face is formed over a semiconductor substrate 1 with a gate insulating film 3 in-between. A second insulating layer 7 is formed over the semiconductor substrate 1 so that the side wall of the gate electrode 10 and the upper face of the first insulating layer 5 are covered therewith. The second insulating layer 7 is etched back to form a side wall spacer 11 on the side wall of the gate electrode 10, and to expose the surface of an element region. The first insulating layer 5 is removed from the upper face of the gate electrode 10. A high-melting point metal film 8 is formed over the surface of the semiconductor substrate 1, so that the upper face of the gate electrode 10 and the surface of the source/drain region 1b are covered therewith. Thereafter, annealing is carried out to turn the upper face of the gate electrode 10 and the surface of the source/drain region 1b into silicide to form a silicide layer 9. COPYRIGHT: (C)2007,JPO&INPIT
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