| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser element which reduces the operation voltage of the element while suppressing the occurrence of a kink (curve of current-optical output characteristic), extends the life of the element, and enables high output from the element. SOLUTION: The semiconductor laser element has an active layer 6, and a semiconductor layer (p-type guide layer 7, p-type cap layer 8, p-type clad layer 9, and p-type contact layer 10) which is formed on the active layer 6 and includes a ridge 11. The ridge 11 has a side face 11a, and a side face 11b located to be opposite to the side face 11a. The side face of the active layer 6 is located substantially on the same line as the side face 11a of the ridge 11 is located. The effective refraction factor of the side face 11a of the ridge 11 for an oscillation wavelength (approximately 410 nm) is different from that of the side face 11b of the ridge 11 for the oscillation wavelength (approximately 410 nm). COPYRIGHT: (C)2007,JPO&INPIT
|
