| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a joined SOI (silicon on insulator) wafer by which mingled metallic impurities are removed from the vicinity of a front layer of an SOI layer. SOLUTION: Oxygen ions are injected from one of surfaces of a silicon singlecrystalline wafer to form an oxygen-ion injected layer in the interior of the wafer. The wafer is thermally oxidized to form a silicon oxide film at least from the oxygen-ion injection surface until the oxygen-ion injected layer. The wafer having the silicon oxide film formed therein is used as a bond wafer. The bond wafer is bonded to a base wafer with the silicon oxide film disposed therebetween. The bond wafer and the base wafer bonded to each other are thermally treated to firmly join the bond to base wafers. The thickness of the bond wafer is reduced to form an SOI layer. Consequently, the SOI wafer has the base wafer, a buried oxide film, and the SOI layer, sequentially formed on the upper side of the base wafer. COPYRIGHT: (C)2007,JPO&INPIT
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