| 摘要 |
PROBLEM TO BE SOLVED: To provide equipment and a method for depositing a thin film having favorable film quality with a low thermal budget. SOLUTION: The equipment for depositing a thin film comprises a first gas introduction system 17 for introducing first gas containing a compound which contains the constitutional element of a target thin film into a reaction chamber 11 and stopping introduction, a second gas introduction system 27 for introducing second gas containing an oxidizing agent or a reducing agent into a second reaction chamber 11 and stopping introduction, a heating means 16 for applying heating energy sequentially and repeatedly to the surface of a substrate 10 arranged in the reaction chamber 11 with an application time of 0.1-100 ms, a system 18 for exhausting the reaction chamber 11, and a control means 30 for sequentially repeating a cycle including a series of procedures composed of the introduction of first gas, the stoppage of first gas, the exhaustion of non-reacted first gas, the introduction of second gas, the application of heating energy, the stoppage of second gas, and the exhaustion of non-reacted second gas. COPYRIGHT: (C)2007,JPO&INPIT
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