| 摘要 |
A position detection method for detecting the position of marks comprises the following steps: a step for detecting first information relating to the position of the mark by detecting light from the mark under first measurement conditions; a step for detecting second information relating to the position of the mark by detecting light from the mark under second measurement conditions which differ from the first measurement conditions; and a step for detecting the position of the mark based on the first and second information, thereby providing a high-precision position detecting method and device serving as an alignment or overlaying detection device in an exposure apparatuses used in manufacturing semiconductor devices, wherein position detection precision is not lost even in the event that the alignment marks are not symmetrical or there are irregularities in the non-symmetry of multiple alignment marks within the same wafer.
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