P-channel metal oxide field effect transistor for half bridge circuit arrangement, has rear side contact used as source connection, where source potential of transistor is at constant value for connecting source connection with heat sink

摘要

The transistor has rear (32) and front side contacts (31) used as source and drain connections. An isolation structure (40) is arranged between a main surface of a body region and the front contact so that only a drain region is contacted via the front contact. A source potential of the transistor is at constant value, so that the source connection is directly and electrically connected with a heat sink lying at constant potential.