| 摘要 |
The present invention can precisely manufacture an X-ray mask pattern at intervals of less than 10 nm by using a thin film crystalline growth method, applying a laminated layer body of a fine structure having precision of less than 1 atomic layer onto a substrate 1, and utilizing difference of X-ray absorption coefficient. A method of manufacturing an X-ray exposure mask comprising the steps of alternately laminating two kinds of a material (2, 4 and 3, 5) consisting of a combination of a semiconductor, metal and insulator having a substantially equal lattice constant and a largely different coefficient of X-ray absorption on a substrate 1 of a crystal body in a thickness of less than 10 ANGSTROM by an epitaxial crystal grown method, and manufacturing a mask 14 for exposing streak-like X-rays on a desired resist 15 with the aid of a difference of the coefficients of X-ray absorption between each layer (2, 4 and 3, 5). <IMAGE> |
