METAL LAYER INTERSECTION DOPING

摘要

The invention provides a method to create ferromagnetism in a semiconductor comprising the steps of: 5 - choosing a suitable semiconductor material, - applying a metal layer onto said semiconductor material, thereby creating a magnetic semiconductor in the diffusion layer between the semiconductor material and the metal layer which magnetic semiconductor is ferromagnetic at a temperature in the range of -55ºC to 125ºC. 10 The invention also provides a composite material comprising a suitable semiconductor material, which composite material has semiconductive and ferromagnetic properties at a temperature in the range of -55ºC to 125ºC wherein a metal layer is applied on a surface of the suitable semiconductor material thus forming a magnetic semiconductor in the diffusion layer between the semiconductor 15 material and the metal layer.